document number: 91188 www.vishay.com s09-0010-rev. a, 19-jan-09 1 power mosfet irfiz34g, sihfiz34g vishay siliconix features ? isolated package ? high voltage isolation = 2.5 kv rms (t = 60 s; f = 60 hz) ? sink to lead creepage distance = 4.8 mm ? 175 c operating temperature ? dynamic dv/dt rating ? low thermal resistance ? lead (pb)-free available description third generation power mosfet s from vishay provide the designer with the best combi nation of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the to-220 fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. the molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. the isolation is equivalent to using a 100 micron mica barrier with standard to-220 product. the fullpak is mounted to a heatsink using a single clip or by a single screw fixing. notes a. repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. v dd = 25 v, starting t j = 25 c, l = 875 h, r g = 25 , i as = 20 a (see fig. 12). c. i sd 30 a, di/dt 200 a/s, v dd v ds , t j 175 c. d. 1.6 mm from case. product summary v ds (v) 60 r ds(on) ( )v gs = 10 v 0.050 q g (max.) (nc) 46 q gs (nc) 11 q gd (nc) 22 configuration single n -channel mosfet g d s s d g to-220 fullpak a v aila b le rohs* compliant ordering information package to-220 fullpak lead (pb)-free irfiz34gpbf sihfiz34g-e3 snpb irfiz34g sihfiz34g absolute maximum ratings t c = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds 60 v gate-source voltage v gs 20 continuous drain current v gs at 10 v t c = 25 c i d 20 a t c = 100 c 14 pulsed drain current a i dm 80 linear derating factor 0.28 w/c single pulse avalanche energy b e as 300 mj maximum power dissipation t c = 25 c p d 42 w peak diode recovery dv/dt c dv/dt 5.0 v/ns operating junction and storage temperature range t j , t stg - 55 to + 175 c soldering recommendations (p eak temperature) for 10 s 300 d mounting torque 6-32 or m3 screw 10 lbf in 1.1 n m * pb containing terminations are not rohs compliant, exemptions may apply
www.vishay.com document number: 91188 2 s09-0010-rev. a, 19-jan-09 irfiz34g, sihfiz34g vishay siliconix notes a. repetitive rating; pulse width limited by maximum junction temper ature (see fig. 11). b. pulse width 300 s; duty cycle 2 % thermal resistance ratings parameter symbol typ. max. unit maximum junction-to-ambient r thja -65 c/w maximum junction-to-case (drain) r thjc -3.6 specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 60 - - v v ds temperature coefficient v ds /t j reference to 25 c, i d = 1 ma - 0.065 - v/c gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 2.0 - 4.0 v gate-source leakage i gss v gs = 20 v - - 100 na zero gate voltage drain current i dss v ds = 60 v, v gs = 0 v - - 25 a v ds = 48 v, v gs = 0 v, t j = 150 c - - 250 drain-source on-state resistance r ds(on) v gs = 10 v i d = 12 a b - - 0.050 forward transconductance g fs v ds = 25 v, i d = 12 a b 9.2 - - s dynamic input capacitance c iss v gs = 0 v, v ds = 25 v, f = 1.0 mhz, see fig. 5 - 1200 - pf output capacitance c oss - 600 - reverse transfer capacitance c rss - 100 - drain to sink capacitance c f = 1.0 mhz - 12 - total gate charge q g v gs = 10 v i d = 30 a, v ds = 48 v see fig. 6 and 13 b --46 nc gate-source charge q gs --11 gate-drain charge q gd --22 turn-on delay time t d(on) v dd = 30 v, i d = 30 a r g = 12 , r d = 1.0 , see fig. 10 b -13- ns rise time t r - 100 - turn-off delay time t d(off) -29- fall time t f -52- internal drain inductance l d between lead, 6 mm (0.25") from package and center of die contact -4.5- nh internal source inductance l s -7.5- drain-source body diode characteristics continuous source-drain diode current i s mosfet symbol showing the integral reverse p - n junction diode --20 a pulsed diode forward current a i sm --80 body diode voltage v sd t j = 25 c, i s = 20 a, v gs = 0 v b --1.6v body diode reverse recovery time t rr t j = 25 c, i f = 30 a, di/dt = 100 a/s b - 120 230 ns body diode reverse recovery charge q rr - 0.70 1.4 c forward turn-on time t on intrinsic turn-on time is neglig ible (turn-on is dominated by l s and l d ) d s g s d g
document number: 91188 www.vishay.com s09-0010-rev. a, 19-jan-09 3 irfiz34g, sihfiz34g vishay siliconix typical characteristics 25 c, unless otherwise noted fig. 1 - typical output characteristics, t c = 25 c fig. 2 - typical output characteristics, t c = 175 c fig. 3 - typical transfer characteristics fig. 4 - normalized on-resistance vs. temperature
www.vishay.com document number: 91188 4 s09-0010-rev. a, 19-jan-09 irfiz34g, sihfiz34g vishay siliconix fig. 5 - typical capacitance vs. drain-to-source voltage fig. 6 - typical gate charge vs. gate-to-source voltage fig. 7 - typical source-drain diode forward voltage fig. 8 - maximum safe operating area
document number: 91188 www.vishay.com s09-0010-rev. a, 19-jan-09 5 irfiz34g, sihfiz34g vishay siliconix fig. 9 - maximum drain current vs. case temperature fig. 10a - switching time test circuit fig. 10b - switching time waveforms fig. 11 - maximum effective transient thermal impedance, junction-to-case p u lse w idth 1 s d u ty factor 0.1 % r d v gs r g d.u.t. 10 v + - v ds v dd v ds 90 % 10 % v gs t d(on) t r t d(off) t f
www.vishay.com document number: 91188 6 s09-0010-rev. a, 19-jan-09 irfiz34g, sihfiz34g vishay siliconix fig. 12a - unclamped inductive test circuit fig. 12b - unclamped inductive waveforms fig. 12c - maximum avalanche energy vs. drain current fig. 13a - basic gate charge waveform fig. 13b - gate charge test circuit r g i as 0.01 t p d.u.t l v ds + - v dd 10 v v ary t p to o b tain re qu ired i as i as v ds v dd v ds t p q gs q gd q g v g charge 10 v d.u.t. 3 ma v gs v ds i g i d 0.3 f 0.2 f 50 k 12 v c u rrent reg u lator c u rrent sampling resistors same type as d.u.t. + -
document number: 91188 www.vishay.com s09-0010-rev. a, 19-jan-09 7 irfiz34g, sihfiz34g vishay siliconix fig. 14 - for n-channel vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91188 . p. w . period di/dt diode reco v ery d v /dt ripple 5 % body diode for w ard drop re-applied v oltage re v erse reco v ery c u rrent body diode for w ard c u rrent v gs = 10 v * v dd i sd dri v er gate dri v e d.u.t. i sd w a v eform d.u.t. v ds w a v eform ind u ctor c u rrent d = p. w . period + - + + + - - - * v gs = 5 v for logic le v el de v ices peak diode recovery dv/dt test circuit v dd ? d v /dt controlled b y r g ? dri v er same type as d.u.t. ? i sd controlled b y d u ty factor "d" ? d.u.t. - de v ice u nder test d.u.t. circ u it layo u t considerations ? lo w stray ind u ctance ? gro u nd plane ? lo w leakage ind u ctance c u rrent transformer r g
document number: 91 000 www.vishay.com revision: 11-mar-11 1 disclaimer legal disclaimer notice vishay all product, product specifications and data ar e subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicab le law, vishay disc laims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, incl uding without limitation specia l, consequential or incidental dama ges, and (iii) any and all impl ied warranties, including warran ties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of pro ducts for certain types of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in gene ric applications. such statements are not binding statements about the suitability of products for a partic ular application. it is the customers responsibility to validate that a particu lar product with the properties described in th e product specification is su itable for use in a particul ar application. parameters provided in datasheets an d/or specifications may vary in different applications and perfo rmance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product co uld result in person al injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that vis hay or its distributor was negligent regarding the design or manufact ure of the part. please contact authorized vishay personnel t o obtain written terms and conditions regarding products designed fo r such applications. no license, express or implied, by estoppel or otherwise, to any intelle ctual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.
|
